Please use this identifier to cite or link to this item: https://doi.org/10.1109/ISDRS.2009.5378216
Title: Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain
Authors: Koh, S.-M.
Sinha, M.
Tong, Y.
Chin, H.-C.
Fang, W.-W.
Zhang, X.
Ng, C.-M.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2009
Source: Koh, S.-M.,Sinha, M.,Tong, Y.,Chin, H.-C.,Fang, W.-W.,Zhang, X.,Ng, C.-M.,Samudra, G.,Yeo, Y.-C. (2009). Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain. 2009 International Semiconductor Device Research Symposium, ISDRS '09 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2009.5378216
Source Title: 2009 International Semiconductor Device Research Symposium, ISDRS '09
URI: http://scholarbank.nus.edu.sg/handle/10635/71901
ISBN: 9781424460304
DOI: 10.1109/ISDRS.2009.5378216
Appears in Collections:Staff Publications

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