Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ISDRS.2009.5378216
| Title: | Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain | Authors: | Koh, S.-M. Sinha, M. Tong, Y. Chin, H.-C. Fang, W.-W. Zhang, X. Ng, C.-M. Samudra, G. Yeo, Y.-C. |
Issue Date: | 2009 | Citation: | Koh, S.-M.,Sinha, M.,Tong, Y.,Chin, H.-C.,Fang, W.-W.,Zhang, X.,Ng, C.-M.,Samudra, G.,Yeo, Y.-C. (2009). Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain. 2009 International Semiconductor Device Research Symposium, ISDRS '09 : -. ScholarBank@NUS Repository. https://doi.org/10.1109/ISDRS.2009.5378216 | Source Title: | 2009 International Semiconductor Device Research Symposium, ISDRS '09 | URI: | http://scholarbank.nus.edu.sg/handle/10635/71901 | ISBN: | 9781424460304 | DOI: | 10.1109/ISDRS.2009.5378216 |
| Appears in Collections: | Staff Publications |
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