Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3487536
Title: Strain engineering and junction design for tunnel field-effect transistor
Authors: Yeo, Y.-C. 
Han, G. 
Yang, Y.
Guo, P.
Issue Date: 2010
Source: Yeo, Y.-C., Han, G., Yang, Y., Guo, P. (2010). Strain engineering and junction design for tunnel field-effect transistor. ECS Transactions 33 (6) : 77-87. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487536
Abstract: We examine technologies aimed at performance enhancement for silicon- or germanium based TFETs, including strain engineering, source/drain junction profile engineering, and use of heterojunction materials. Device and circuit simulation results will also be discussed. ©The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/71872
ISBN: 9781566778251
ISSN: 19385862
DOI: 10.1149/1.3487536
Appears in Collections:Staff Publications

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