Please use this identifier to cite or link to this item:
|Title:||Strain engineering and junction design for tunnel field-effect transistor|
|Authors:||Yeo, Y.-C. |
|Citation:||Yeo, Y.-C., Han, G., Yang, Y., Guo, P. (2010). Strain engineering and junction design for tunnel field-effect transistor. ECS Transactions 33 (6) : 77-87. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3487536|
|Abstract:||We examine technologies aimed at performance enhancement for silicon- or germanium based TFETs, including strain engineering, source/drain junction profile engineering, and use of heterojunction materials. Device and circuit simulation results will also be discussed. ©The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 13, 2018
WEB OF SCIENCETM
checked on Nov 5, 2018
checked on Oct 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.