Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.823622
Title: Solid-phase crystallization of evaporated silicon thin films on glass for photovoltaics: A combined SEM and TEM study
Authors: Liu, F.
Romero, M.J.
Jones, K.M.
Al-Jassim, M.M.
Kunz, O.
Wong, J.
Aberle, A.G. 
Keywords: Evaporation
Glass
Impurities
Intragrain defects
Photovoltaics
Polycrystalline silicon
Solid-phase crystallization
Thin-film solar cells
Issue Date: 2009
Citation: Liu, F.,Romero, M.J.,Jones, K.M.,Al-Jassim, M.M.,Kunz, O.,Wong, J.,Aberle, A.G. (2009). Solid-phase crystallization of evaporated silicon thin films on glass for photovoltaics: A combined SEM and TEM study. Proceedings of SPIE - The International Society for Optical Engineering 7409 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.823622
Abstract: The material-quality limiting factors of evaporated solid-phase crystallized (SPC) poly-Si thin films fabricated on planar glass for photovoltaic applications are investigated by a study combining scanning electron microscopy and transmission electron microscopy. The grains in the investigated thin films are found to be randomly oriented, with an average grain size of ∼2.1 μm. In general, the grains are found to have a high defect density, although some grains are more defective than others. We also observe a high level of impurity incorporation, in particular, oxygen, into the film. The optical activity of the Si films is dominated by deep band tail states. We conclude that the high intragrain defect densities and the high impurity levels are two major limiting factors for obtaining high-quality evaporated SPC poly-Si thin films for photovoltaics. © 2009 SPIE.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/71813
ISBN: 9780819476999
ISSN: 0277786X
DOI: 10.1117/12.823622
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