Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3666661
Title: Size effect of embedded nanocrystals in floating gate MOSFET devices
Authors: Cheng, X.Z. 
Jalil, M.B.A. 
Samudra, G.S. 
Keywords: Floating gate MOSFET memory
Quantum Confinement
Issue Date: 2011
Source: Cheng, X.Z., Jalil, M.B.A., Samudra, G.S. (2011). Size effect of embedded nanocrystals in floating gate MOSFET devices. AIP Conference Proceedings 1399 : 889-890. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3666661
Abstract: We investigate the transport and retention properties of a floating-gate MOSFET memory device incorporating embedded nanocrystals. Of particular interest is the nanocrystal size effect on the retention lifetime of the device. The quantum confinement effects and changes to the electrostatic energy arising from the decrease of the nanocrystal size are analyzed both numerically and analytically. © 2011 American Institute of Physics.
Source Title: AIP Conference Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/71792
ISBN: 9780735410022
ISSN: 0094243X
DOI: 10.1063/1.3666661
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

31
checked on Feb 11, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.