Please use this identifier to cite or link to this item:
|Title:||SiGe HBTs model converting technique from SGP to VBIC model|
|Keywords:||Bipolar transistor modeling|
|Citation:||Lin, F., Zhou, T., Chen, B., Ooi, B.L., Kooi, P.S. (2002-01-02). SiGe HBTs model converting technique from SGP to VBIC model. Microelectronics Journal 33 (1-2) : 45-54. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(01)00103-3|
|Abstract:||A new parameter extraction methodology - local ratio evaluation is presented which is well suitable for converting one model to another. An example is given for VBIC model extraction by going through SPICE Gummel-Poon (SGP) model. It is based on the fact that VBIC model is a direct enhancement and extension of SGP model. First, the standard SGP model is extracted in the standard way. Next, SGP model parameters are directly converted to those in VBIC model. Local modifications are subsequently carried out for those parameters that are affected by different equations used in the two models. Finally, new model parameters for enhanced modeling features are introduced by evaluating the difference between measurement and simulation. © 2002 Elsevier Science Ltd. All rights reserved.|
|Source Title:||Microelectronics Journal|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 15, 2018
WEB OF SCIENCETM
checked on May 23, 2018
checked on Jun 1, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.