Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2692(01)00103-3
Title: SiGe HBTs model converting technique from SGP to VBIC model
Authors: Lin, F.
Zhou, T.
Chen, B. 
Ooi, B.L. 
Kooi, P.S. 
Keywords: Bipolar transistor modeling
Compact model
Model conversion
Parameter extraction
SGP
SiGe HBT
VBIC
Issue Date: 2-Jan-2002
Citation: Lin, F., Zhou, T., Chen, B., Ooi, B.L., Kooi, P.S. (2002-01-02). SiGe HBTs model converting technique from SGP to VBIC model. Microelectronics Journal 33 (1-2) : 45-54. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(01)00103-3
Abstract: A new parameter extraction methodology - local ratio evaluation is presented which is well suitable for converting one model to another. An example is given for VBIC model extraction by going through SPICE Gummel-Poon (SGP) model. It is based on the fact that VBIC model is a direct enhancement and extension of SGP model. First, the standard SGP model is extracted in the standard way. Next, SGP model parameters are directly converted to those in VBIC model. Local modifications are subsequently carried out for those parameters that are affected by different equations used in the two models. Finally, new model parameters for enhanced modeling features are introduced by evaluating the difference between measurement and simulation. © 2002 Elsevier Science Ltd. All rights reserved.
Source Title: Microelectronics Journal
URI: http://scholarbank.nus.edu.sg/handle/10635/71765
ISSN: 00262692
DOI: 10.1016/S0026-2692(01)00103-3
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