Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant

Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2010.5667527

Title:	Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant
Authors:	Tong, Y. Koh, S.-M. Zhou, Q. Du, A.Y. Yeo, Y.-C.
Issue Date:	2010
Citation:	Tong, Y.,Koh, S.-M.,Zhou, Q.,Du, A.Y.,Yeo, Y.-C. (2010). Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings : 1021-1023. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2010.5667527
Abstract:	In this paper, we examine the physical properties of NiSi/p-Si implanted with various combinations of aluminum (Al) and sulfur (S) doses for Schottky barrier tuning. Techniques used included HRTEM, TOF-SIMS, HAADF STEM, and EDX. We also measured the integral interfacial dose (IID) of Al and S, i.e. amount of Al and S found with 2.5 nm of the interface, and correlated it to the Schottky barrier height (SBH). For the split with the same Al and S implant dose, the SBH tuning effect of Al overwhelms that of S and the extracted SBH is 0.137 eV. ©2010 IEEE.
Source Title:	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
URI:	http://scholarbank.nus.edu.sg/handle/10635/71717
ISBN:	9781424457984
DOI:	10.1109/ICSICT.2010.5667527
Appears in Collections:	Staff Publications

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