Please use this identifier to cite or link to this item: https://doi.org/10.1109/IWJT.2007.4279954
Title: Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation
Authors: Chi, D.Z.
Yao, H.B.
Liew, S.L.
Tan, C.C.
Chua, C.T.
Chua, K.C.
Li, R.
Lee, S.J. 
Issue Date: 2007
Source: Chi, D.Z.,Yao, H.B.,Liew, S.L.,Tan, C.C.,Chua, C.T.,Chua, K.C.,Li, R.,Lee, S.J. (2007). Schottky barrier height in germanide/Ge contacts and its engineering through germanidation induced dopant segregation. Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007 : 81-86. ScholarBank@NUS Repository. https://doi.org/10.1109/IWJT.2007.4279954
Abstract: The lack of a stable native germanium oxide has been the main obstacle for the use of Ge in complementary metal oxide-semiconductor CMOS devices. However, recent development of next generation deposited high-k gate dielectrics for Si also allows for the fabrication of highperformance Ge-based metal-oxide- semiconductor field effect transistors (MOSFETs). For the formation of electrical contacts in Ge-based MOSFETs, transition metal germanides, such as Ni- and Pt-germanides, appear to be suitable candidates for this application due to their low resistivity, low formation temperatures (as low as 250°C), and ability to form in self-alignment. In this work, we have characterized the material and electrical properties of nickel and platinum germanide films as Schottky source/drain contacts for Ge- MOSFETs. This paper will focus on the electrical characterization of Ni- and Pt-germanide Schottky contacts on crystalline germanium substrates with particular emphasis on the theoretical analysis of the effect of inversion layer on I- V and C- V characteristics. In addition, the Schottky barrier modulation by germanidation induced dopant segregation will also be discussed. ©2007 IEEE.
Source Title: Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007
URI: http://scholarbank.nus.edu.sg/handle/10635/71716
ISBN: 1424411033
DOI: 10.1109/IWJT.2007.4279954
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