Please use this identifier to cite or link to this item: https://doi.org/10.1109/RELPHY.2008.4558947
Title: Scanning near-field photon emission microscopy
Authors: Isakov, D.
Geinzer, T.
Tio, A.
Phang, J.C.H. 
Zhang, Y.
Balk, L.J.
Issue Date: 2008
Source: Isakov, D., Geinzer, T., Tio, A., Phang, J.C.H., Zhang, Y., Balk, L.J. (2008). Scanning near-field photon emission microscopy. IEEE International Reliability Physics Symposium Proceedings : 575-579. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2008.4558947
Abstract: A Scanning Near-field Photon Emission Microscope (SNPEM) for monitoring photon emission sites with a spatial resolution of between 50 to 200 nm is described. A protrusion type probe with a base diameter larger than a wavelength is proposed as a good compromise between resolution and sensitivity. Photon emissions from silicon pn junction and n-MOSFET have been detected with resolution clearly better than the far-field PEM (FFPEM). Features in photon emission distribution smaller than 200 nm were revealed in spite the fact that metal lines prevented the SNPEM probe to reach near-field condition with an actual emission source. ©2008 IEEE.
Source Title: IEEE International Reliability Physics Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/71706
ISBN: 9781424420506
ISSN: 15417026
DOI: 10.1109/RELPHY.2008.4558947
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