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|Title:||Scanning near-field photon emission microscopy|
|Citation:||Isakov, D., Geinzer, T., Tio, A., Phang, J.C.H., Zhang, Y., Balk, L.J. (2008). Scanning near-field photon emission microscopy. IEEE International Reliability Physics Symposium Proceedings : 575-579. ScholarBank@NUS Repository. https://doi.org/10.1109/RELPHY.2008.4558947|
|Abstract:||A Scanning Near-field Photon Emission Microscope (SNPEM) for monitoring photon emission sites with a spatial resolution of between 50 to 200 nm is described. A protrusion type probe with a base diameter larger than a wavelength is proposed as a good compromise between resolution and sensitivity. Photon emissions from silicon pn junction and n-MOSFET have been detected with resolution clearly better than the far-field PEM (FFPEM). Features in photon emission distribution smaller than 200 nm were revealed in spite the fact that metal lines prevented the SNPEM probe to reach near-field condition with an actual emission source. ©2008 IEEE.|
|Source Title:||IEEE International Reliability Physics Symposium Proceedings|
|Appears in Collections:||Staff Publications|
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