Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/71699
Title: Run-to-run process control for chemical mechanical polishing in semiconductor manufacturing
Authors: Da, L.
Kumar, V.G.
Tay, A. 
Al Mamun, A. 
Ho, W.K. 
See, A.
Chan, L.
Keywords: Chemical mechanical polishing
Exponentially weighted moving-average
Run-to-run (R2R) control
Semiconductor manufacturing
Issue Date: 2002
Source: Da, L.,Kumar, V.G.,Tay, A.,Al Mamun, A.,Ho, W.K.,See, A.,Chan, L. (2002). Run-to-run process control for chemical mechanical polishing in semiconductor manufacturing. IEEE International Symposium on Intelligent Control - Proceedings : 740-745. ScholarBank@NUS Repository.
Abstract: Chemical mechanical polishing (CMP) has become, in a few short years, an indispensable semiconductor processing module used in fabrication facilities worldwide. The lack of in-situ measurements of the product qualities of interest, in this case, the surface thickness uniformity, makes Run to run (R2R) control the only viable scheme in most semiconductor manufacturing processes. The literature contains many variations of R2R control schemes to control the CMP process. In this paper, we analyze the performance of these R2R control schemes and proposed a self-tuning predictor-corrector controller (PCC). Initial simulation results depicts order of magnitude improvement in the within wafer uniformity as compared to traditional R2R control schemes.
Source Title: IEEE International Symposium on Intelligent Control - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/71699
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

20
checked on Jan 12, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.