Please use this identifier to cite or link to this item: https://doi.org/10.1002/pssc.200778527
Title: Rhodium-based Schottky contacts on n-doped gallium nitride
Authors: Tian, F.
Chor, E.F. 
Issue Date: 2008
Citation: Tian, F., Chor, E.F. (2008). Rhodium-based Schottky contacts on n-doped gallium nitride. Physica Status Solidi (C) Current Topics in Solid State Physics 5 (6) : 1953-1955. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200778527
Abstract: Electrical characteristics and thermal stability of Rhodium (Rh)-based Schottky contacts on n-GaN, including Rh/Au and Ni/Rh/Au, have been investigated and compared with those of the Ni/Au contact. Although the maximum Schottky barrier height (SBH) of the Rh/Au contact is slightly lower than that of Ni/Au, the inclusion of a thin Ni layer to yield the Ni/Rh/Au contact has led to a maximum SBH of 0.80 eV, surpassing that of Ni/Au by 0.07 eV and leading to a reduced reverse leakage current at -1 V by 1 order of magnitude compared to that of Ni/Au. The good performance of the Ni/Rh/Au contact can be attributed to the co-existence of Rh and a thin layer of Ni, which leads to limited adverse reaction of Ni with the GaN substrate, and formation of NiO and reduced interfacial defects at the metal/GaN interface. In addition, thermal stability studies have shown that Rh-based contacts exhibit better morphological stability than Ni/Au, and the Ni/Rh/Au contact has improved thermal stability over Rh/Au and Ni/Au contacts. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
Source Title: Physica Status Solidi (C) Current Topics in Solid State Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/71643
ISSN: 18626351
DOI: 10.1002/pssc.200778527
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