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|Title:||Reliability improvement using buried capping layer in advanced interconnects|
Low-k leakage current
|Source:||Yiang, K.Y.,Mok, T.S.,Yoo, W.J.,Krishnamoorthy, A. (2004). Reliability improvement using buried capping layer in advanced interconnects. Annual Proceedings - Reliability Physics (Symposium) : 333-337. ScholarBank@NUS Repository.|
|Abstract:||Electrical leakage and breakdown characteristics of low-dielectric constant (low-k) dielectrics are increasingly becoming major reliability issues as inter-metals spacings in interconnects are scaled towards the 0.1 urn technology node. These issues are greatly alleviated by the implementation of a buried capping layer (BCL) in Cu damascene structures. It is found that a BCL of 100 Å thickness in Cu/SiOC interdigitated comb structures reduces the leakage current by 1 order of magnitude and improves breakdown strength by a factor of 1.5 to 2. In addition, the BCL is able to suppress the formation of process-induced traps in the low-k dielectric. These findings can have important reliability considerations for Cu/low-k integration schemes.|
|Source Title:||Annual Proceedings - Reliability Physics (Symposium)|
|Appears in Collections:||Staff Publications|
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