Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.654741
Title: Real-time spatial control of steady-state wafer temperature during thermal processing in microlithography
Authors: Tay, A. 
Ho, W.-K. 
Hu, N.
Tsai, K.-Y.
Zhou, Y.
Keywords: Microlithography
Photoresist Processing
Semiconductor Manufacturing
Temperature Control
Issue Date: 2006
Source: Tay, A., Ho, W.-K., Hu, N., Tsai, K.-Y., Zhou, Y. (2006). Real-time spatial control of steady-state wafer temperature during thermal processing in microlithography. Proceedings of SPIE - The International Society for Optical Engineering 6155 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.654741
Abstract: An in-situ method to control the steady-state wafer temperature uniformity during thermal processing in microlithography is presented. Based on first principle thermal modeling of the thermal system, the temperature of the wafer can be estimated and controlled in real-time by monitoring the bake-plate temperature profile. This is useful as production wafers usually do not have temperature sensors embedded on it, these bake-plates are usually calibrated based on test wafers with embedded sensors. However as processes are subjected to process drifts, disturbances and wafer warpages, real-time correction of the bake-plate temperatures to achieve uniform wafer temperature at steady-state is not possible in current baking systems. Any correction is done based on run-to-run control techniques which depends on the sampling frequency of the wafers. Our approach is real-time and can correct for any variations in the desired steady-state wafer temperature. Experimental results demonstrate the feasibility of the approach.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/71572
ISBN: 0819461989
ISSN: 0277786X
DOI: 10.1117/12.654741
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