Performance breakthrough in 8 nm gate length gate-all-around nanowire transistors using metallic nanowire contacts

Abstract

Parasitic S/D resistances in extremely scaled GAA nanowire devices can pathologically limit the device drive current performance. We demonstrate for the first time, that S/D extension dopant profile engineering together with successful integration of low resistivity metallic nanowire contacts greatly reduces parasitic resistances. This allows 8nm gate length GAA nanowire devices in this work to attain record-high drive currents of 3740μA/μm. © 2008 IEEE.