Please use this identifier to cite or link to this item: https://doi.org/10.1109/PEDS.2009.5385757
Title: Partial SOI superjunction power LDMOS for PIC application
Authors: Chen, Y.
Liang, Y.C. 
Samudra, G.S. 
Buddharaju, K.D.
Feng, H.
Keywords: Automotive power electronics
Partial SOI
Power integrated circuits
Power MOSFET
Substrate assisted depletion
Superjunction structure
Issue Date: 2009
Source: Chen, Y., Liang, Y.C., Samudra, G.S., Buddharaju, K.D., Feng, H. (2009). Partial SOI superjunction power LDMOS for PIC application. Proceedings of the International Conference on Power Electronics and Drive Systems : 1041-1046. ScholarBank@NUS Repository. https://doi.org/10.1109/PEDS.2009.5385757
Abstract: An enabling superjunction device technology, which is fully integrated on the Partial Silicon on Insulator (PSOI) platform using the bulk silicon substrate, is proposed and fabricated. The proposed technology has the potential to eliminate the substrate assisted depletion. It enables the implementation of lateral superjunction power MOSFET (SJ LDMOS) on bulk silicon substrate without sacrificing its thermal performance. In this paper, the approach was demonstrated successfully on both p-i-n diode and planar gate SJ LDMOS devices. The proposed technology has enabled the fabrication of SJ Power Integrated Circuits (PIC) on the bulk silicon substrate for future automotive power electronics applications.
Source Title: Proceedings of the International Conference on Power Electronics and Drive Systems
URI: http://scholarbank.nus.edu.sg/handle/10635/71362
ISBN: 9781424441662
DOI: 10.1109/PEDS.2009.5385757
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