Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2714666
Title: Partial magnetization reversal in a perpendicular exchange-biased [PdCo] FeMn film through laser annealing
Authors: Choi, S.D.
Joo, H.W.
Lee, S.S.
Hwang, D.G.
Choi, J.H.
Lee, K.A.
Kim, S. 
Bae, S. 
Issue Date: 2007
Source: Choi, S.D., Joo, H.W., Lee, S.S., Hwang, D.G., Choi, J.H., Lee, K.A., Kim, S., Bae, S. (2007). Partial magnetization reversal in a perpendicular exchange-biased [PdCo] FeMn film through laser annealing. Journal of Applied Physics 101 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2714666
Abstract: Partial magnetization reversal on the perpendicular exchange-bias characteristics in the [PdCo] ×5FeMn bilayered and [PdCo] ×2CuCo [PdCo] ×2FeMn spin valve thin films was investigated using laser. The hysteresis loops were measured using the extraordinary Hall effect and magneto-optical Kerr effect (MOKE). By increasing the output intensity of the laser, the exchange-bias fields in the [PdCo] ×5FeMn bilayered thin film were gradually changed from negative to positive. The distribution of partial magnetization reversal in the vicinity of the laser spot was measured by using MOKE. Although the magnetic moment of the pinned layer was gradually reversed by using laser annealing in the MOKE loops of the [PdCo] ×2CuCo [PdCo] ×2FeMn spin valves' structure, that of the free layer was not changed. When the pattern size was decreased to 5×5 μ m2, the direction of exchange biasing was fully reversed through laser annealing without distorting the hysteresis loop. All the patterned samples below 100×100 μ m2 have the same hysteresis loop, and the reversed loops were not distorted and reduced when laser annealing was used. © 2007 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/71361
ISSN: 00218979
DOI: 10.1063/1.2714666
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