Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.084
Title: Optical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric field
Authors: Zhang, X.H.
Liu, W.
Chua, S.J. 
Keywords: A1. Photoluminescence
A1. Time-resolved photoluminescence
A3. Quantum wells
B1. Indium gallium nitride
Issue Date: 1-Aug-2004
Source: Zhang, X.H., Liu, W., Chua, S.J. (2004-08-01). Optical transitions in InGaN/GaN quantum wells: Effects of the piezoelectric field. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 521-526. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.084
Abstract: In this paper, we present the results of photovoltage (PV), continuous wave (cw) and time-resolved photoluminescence (PL) measurements on a set of InGaN/GaN quantum wells (QWs) grown by metalorganic chemical vapor deposition on sapphire substrates. The energy difference between the absorption edge and PL peak increases with well width. The cw PL spectra exhibit blueshift with increasing excitation intensity and the blueshift drastically increases with the well width. The PL decay times in wider QWs are significantly longer than in narrower QWs. The PL decay times also decreases with increasing excitation intensity. It is found that the lattice-mismatch strain-induced piezoelectric field plays a important role in the optical transitions in InGaN/GaN QWs. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/71279
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.04.084
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