Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIT.2009.5383696
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dc.titleOn the accuracy of de-embedding technologies for on-wafer measurement up to 170GHz
dc.contributor.authorZhang, B.
dc.contributor.authorXiong, Y.-Z.
dc.contributor.authorWang, L.
dc.contributor.authorTeck-Guan, L.
dc.contributor.authorZhuang, Y.-Q.
dc.contributor.authorLi, L.-W.
dc.contributor.authorYuan, X.
dc.date.accessioned2014-06-19T03:21:13Z
dc.date.available2014-06-19T03:21:13Z
dc.date.issued2009
dc.identifier.citationZhang, B., Xiong, Y.-Z., Wang, L., Teck-Guan, L., Zhuang, Y.-Q., Li, L.-W., Yuan, X. (2009). On the accuracy of de-embedding technologies for on-wafer measurement up to 170GHz. 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009 : 284-287. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIT.2009.5383696
dc.identifier.isbn9781424450312
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/71218
dc.description.abstractWith the available operation frequency of circuit increasing into tens of gigahertz or even terahertz. The accurate device model will help designer to get excellent circuit performance and reduce design cycles. So for device modeling, the de-embedding technology becomes more critical. In this paper, a new S-parameter matrix calculation de-embedding technology is proposed. A comparison of different de-embedding up to 170GHz is performed. The results showed that proposed method is with good agreement with measurement and EM 3D simulation result, even up to 170 GHz. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/RFIT.2009.5383696
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/RFIT.2009.5383696
dc.description.sourcetitle2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009
dc.description.page284-287
dc.identifier.isiut000276343800071
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