Please use this identifier to cite or link to this item: https://doi.org/10.1109/RFIT.2009.5383696
Title: On the accuracy of de-embedding technologies for on-wafer measurement up to 170GHz
Authors: Zhang, B.
Xiong, Y.-Z.
Wang, L.
Teck-Guan, L.
Zhuang, Y.-Q.
Li, L.-W. 
Yuan, X.
Issue Date: 2009
Source: Zhang, B., Xiong, Y.-Z., Wang, L., Teck-Guan, L., Zhuang, Y.-Q., Li, L.-W., Yuan, X. (2009). On the accuracy of de-embedding technologies for on-wafer measurement up to 170GHz. 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009 : 284-287. ScholarBank@NUS Repository. https://doi.org/10.1109/RFIT.2009.5383696
Abstract: With the available operation frequency of circuit increasing into tens of gigahertz or even terahertz. The accurate device model will help designer to get excellent circuit performance and reduce design cycles. So for device modeling, the de-embedding technology becomes more critical. In this paper, a new S-parameter matrix calculation de-embedding technology is proposed. A comparison of different de-embedding up to 170GHz is performed. The results showed that proposed method is with good agreement with measurement and EM 3D simulation result, even up to 170 GHz. © 2009 IEEE.
Source Title: 2009 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2009
URI: http://scholarbank.nus.edu.sg/handle/10635/71218
ISBN: 9781424450312
DOI: 10.1109/RFIT.2009.5383696
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