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|Title:||Near-IR photon emission spectroscopy on strained and unstrained 60 nm silicon nMOSFETs|
|Citation:||Tan, S.L.,Ang, K.W.,Toh, K.H.,Isakov, D.,Chua, C.M.,Koh, L.S.,Yeo, Y.C.,Chan, D.S.H.,Phang, J.C.H. (2007). Near-IR photon emission spectroscopy on strained and unstrained 60 nm silicon nMOSFETs. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 81-85. ScholarBank@NUS Repository.|
|Abstract:||Spectral analysis of near IR photon emissions was performed on unstrained as well as uniaxial tensile strained nMOSFETs with physical gate length of 60 nm. The significant differences in the observed spectra could be attributed to the strain-induced bandgap narrowing. This shows that photon emission spectroscopy could potentially be used as a tool to monitor strain in the nMOSFET channel. Copyright © 2007 ASM International® All rights reserved.|
|Source Title:||Conference Proceedings from the International Symposium for Testing and Failure Analysis|
|Appears in Collections:||Staff Publications|
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