Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2008.4588178
Title: Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs
Authors: Tan, S.L.
Teo, J.K.J.
Toh, K.H.
Isakov, D.
Chan, D.S.H. 
Koh, L.S.
Chua, C.M.
Phang, J.C.H. 
Issue Date: 2008
Source: Tan, S.L.,Teo, J.K.J.,Toh, K.H.,Isakov, D.,Chan, D.S.H.,Koh, L.S.,Chua, C.M.,Phang, J.C.H. (2008). Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2008.4588178
Abstract: Near-infrared photon emission spectra were obtained from the frontside of silicon nMOSFETs and pMOSFETs with a gate length of 0.13 μm and biased into saturation. These spectra were obtained using a high sensitivity in-lens spectroscopic photon emission microscope. Frontside NIR photon emission spectroscopy are performed on 0.13 μm saturated nMOSFETs and pMOSFETs at different gate and drain bias. The nMOSFETs photon emission spectra obtained are significantly different from some previously reported photon emission spectra. The NIR photon emission spectra of the nMOSFETs and pMOSFETs have similar peaks and suggest that the electric field condition in the channels of the nMOSFETs and pMOSFETs are similar.
Source Title: Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI: http://scholarbank.nus.edu.sg/handle/10635/71104
ISBN: 1424420393
DOI: 10.1109/IPFA.2008.4588178
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