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|Title:||Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs|
|Citation:||Tan, S.L.,Teo, J.K.J.,Toh, K.H.,Isakov, D.,Chan, D.S.H.,Koh, L.S.,Chua, C.M.,Phang, J.C.H. (2008). Near-infrared spectroscopic photon emission microscopy of 0.13 μm silicon nMOSFETs and pMOSFETs. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2008.4588178|
|Abstract:||Near-infrared photon emission spectra were obtained from the frontside of silicon nMOSFETs and pMOSFETs with a gate length of 0.13 μm and biased into saturation. These spectra were obtained using a high sensitivity in-lens spectroscopic photon emission microscope. Frontside NIR photon emission spectroscopy are performed on 0.13 μm saturated nMOSFETs and pMOSFETs at different gate and drain bias. The nMOSFETs photon emission spectra obtained are significantly different from some previously reported photon emission spectra. The NIR photon emission spectra of the nMOSFETs and pMOSFETs have similar peaks and suggest that the electric field condition in the channels of the nMOSFETs and pMOSFETs are similar.|
|Source Title:||Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA|
|Appears in Collections:||Staff Publications|
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