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|Title:||Nanopatterning and selective area epitaxy of GaN on Si substrate|
|Keywords:||GaN on Si substrate|
Selective area epitaxy
|Citation:||Wang, L.S., Chua, S.J., Tripathy, S., Zang, K.Y., Wang, B.Z., Teng, J.H. (2008). Nanopatterning and selective area epitaxy of GaN on Si substrate. Proceedings of SPIE - The International Society for Optical Engineering 6894 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.762149|
|Abstract:||Due to lack of suitable lattice matched substrates, III-Nitride materials are usually grown on sapphire, SiC, and silicon. The heteroepitaxy of GaN on these substrates often incorporates a high density of dislocation and point defects due to lattice and thermal mismatch. It is desirable to reduce the defect density in III-Nitrides in order to fabricate longer lifetime and high brightness light emitting diodes, lasers, and high-electron mobility transistors. In this context, nano-scale epitaxy on patterned Si substrates allows lateral growth, which eventually leads to a reduction of defect density and strain in the overgrown GaN films. Large area nano-patterning with dielectric masks would also be useful to fabricate highly-ordered and dense nitride nanostructures by selective area homo- and hetero-epitaxy.|
|Source Title:||Proceedings of SPIE - The International Society for Optical Engineering|
|Appears in Collections:||Staff Publications|
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