Please use this identifier to cite or link to this item:
|Title:||Multistate per-cell magnetoresistive random-access memory written at curie point|
Magnetic tunnel junctions
Magnetoresistive random-access memory
|Citation:||Zheng, Y.K., Wu, Y.H., Guo, Z.B., Han, G.C., Li, K.B., Qiu, J.J., Xie, H., Luo, P. (2002-09). Multistate per-cell magnetoresistive random-access memory written at curie point. IEEE Transactions on Magnetics 38 (5 I) : 2850-2852. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2002.802858|
|Abstract:||A multistate per-cell magnetoresistive random-access memory (MRAM) that writes data by a thermally assisted technique and reads data using the angular-dependent magnetoresistance is proposed. A hard magnetic layer or pinned ferromagnetic layer (CoFe-IrMn) is used as the recording layer. The free layer serves as the read layer. Before reading, the free layer's magnetization is set to the initial state. For the N states per-cell MRAM, the magnetization angle of the ith state (i = 0 to N - 1) between the free layer and recording layer can be set to be ac os (1 - 2*i/(N - 1)). For example, in the four-state per-cell MRAM, the magnetization angle can be set to be acos(1), acos(1/3), acos(-1/3), and acos(-1), which represent the four states, respectively. More states can be obtained if the signal-to-noise ratio is sufficient. At near Curie point, a small external field can be used to record the signal. In order to verify the idea, a spin-valve giant-magnetoresistance memory cell was fabricated using e-beam lithography and ultrahigh voltage sputtering. A 25-mA heating current and a small external field are enough to assistant the writing process. A four-state per-cell memory is realized by this method.|
|Source Title:||IEEE Transactions on Magnetics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 19, 2018
WEB OF SCIENCETM
checked on Apr 10, 2018
checked on May 11, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.