Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.846560
Title: Monitoring and control of photoresist properties and CD during photoresist processing
Authors: Yang, G.
Ngo, Y.-S.
Putra, A.S. 
Ang, K.-T.
Tay, A. 
Fang, Z.-P.
Keywords: Photoresist processing
real-time control
temperature control
Issue Date: 2010
Source: Yang, G., Ngo, Y.-S., Putra, A.S., Ang, K.-T., Tay, A., Fang, Z.-P. (2010). Monitoring and control of photoresist properties and CD during photoresist processing. Proceedings of SPIE - The International Society for Optical Engineering 7638 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.846560
Abstract: Current approaches to control critical dimensions (CD) uniformity during lithography is primarily based on run-to- run (R2R) methods where the CD is measured at the end of the process and correction is done on the next wafer (or batch of wafers) by adjusting the parameter set-points. In this work, we proposed a method to monitor the various photoresist parameters (e.g. photoresist thickness, photoactive compound) and CD in-situ and in real-time. Through modeling and real-time identification, we develop new in-situ measurement techniques for the various parameters of interest in the lithography sequence using existing available data in the manufacturing process. © 2010 Copyright SPIE - The International Society for Optical Engineering.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/71016
ISBN: 9780819480521
ISSN: 0277786X
DOI: 10.1117/12.846560
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

30
checked on Dec 10, 2017

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.