Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2006.346736
Title: Modeling study of InSb thin film for advanced III-V MOSFET applications
Authors: Zhu, Z.G.
Low, T.
Li, M.F. 
Fan, W.J.
Bai, P.
Kwong, D.L.
Samudra, G. 
Issue Date: 2006
Source: Zhu, Z.G.,Low, T.,Li, M.F.,Fan, W.J.,Bai, P.,Kwong, D.L.,Samudra, G. (2006). Modeling study of InSb thin film for advanced III-V MOSFET applications. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2006.346736
Abstract: Band structure of III-V material InSb thin films is calculated using empirical pseudopotential method (EPM). Contrary to the predictions by simple effective mass methods, our calculation predicts that the Γ valley (with the smallest isotropic bulk effective mass) in InSb remains the lowest lying conduction valley despite size quantization effects in the presence of competing L and Δ valleys which have larger quantization mass. Based on EPM, we computed the important electronic parameters (effective mass, valley minima) of InSb thin film as a function of film thicknesses. Our calculations reveal that the 'effective mass ' of Γ valley electrons increases with the scaling down of film thickness. We then studied the transport of InSb thin film using Non-Equilibrium Green's Function. The calculation reveals that InSb is comparable but not superior to Si as channel material of ultra-thin body double gate n-MOSFET in the ballistic limit of these devices.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/70998
ISBN: 1424404398
ISSN: 01631918
DOI: 10.1109/IEDM.2006.346736
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