Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2009.5424306
Title: Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels
Authors: Ma, F.-J. 
Rustagi, S.C.
Zhao, H.
Samudra, G.S. 
Singh, N.
Budhaaraju, K.D.
Lo, G.Q.
Kwong, D.L.
Issue Date: 2009
Source: Ma, F.-J.,Rustagi, S.C.,Zhao, H.,Samudra, G.S.,Singh, N.,Budhaaraju, K.D.,Lo, G.Q.,Kwong, D.L. (2009). Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels. Technical Digest - International Electron Devices Meeting, IEDM : 21.5.1-21.5.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2009.5424306
Abstract: A new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stressretarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels. © 2009 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/70997
ISBN: 9781424456406
ISSN: 01631918
DOI: 10.1109/IEDM.2009.5424306
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