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https://doi.org/10.1109/IEDM.2009.5424306
Title: | Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels | Authors: | Ma, F.-J. Rustagi, S.C. Zhao, H. Samudra, G.S. Singh, N. Budhaaraju, K.D. Lo, G.Q. Kwong, D.L. |
Issue Date: | 2009 | Citation: | Ma, F.-J.,Rustagi, S.C.,Zhao, H.,Samudra, G.S.,Singh, N.,Budhaaraju, K.D.,Lo, G.Q.,Kwong, D.L. (2009). Modeling of stress-retarded orientation-dependent oxidation: Shape engineering of silicon nanowire channels. Technical Digest - International Electron Devices Meeting, IEDM : 21.5.1-21.5.4. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2009.5424306 | Abstract: | A new universal stress retardation parameter set is successful to account for initial oxidation rate enhancement, orientation-dependent retardation and self-limiting phenomena observed in the dry oxidation experiment of the silicon FIN nanostructures over a wide temperature range. This stressretarded orientation-dependent model was proved to be trustworthy in shape engineering of silicon nanowire channels. © 2009 IEEE. | Source Title: | Technical Digest - International Electron Devices Meeting, IEDM | URI: | http://scholarbank.nus.edu.sg/handle/10635/70997 | ISBN: | 9781424456406 | ISSN: | 01631918 | DOI: | 10.1109/IEDM.2009.5424306 |
Appears in Collections: | Staff Publications |
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