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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.066
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dc.titleMetalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity
dc.contributor.authorZhang, X.H.
dc.contributor.authorDong, J.R.
dc.contributor.authorChua, S.J.
dc.contributor.authorZhang, J.
dc.contributor.authorYong, A.
dc.date.accessioned2014-06-19T03:17:47Z
dc.date.available2014-06-19T03:17:47Z
dc.date.issued2004-08-01
dc.identifier.citationZhang, X.H., Dong, J.R., Chua, S.J., Zhang, J., Yong, A. (2004-08-01). Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 420-425. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.066
dc.identifier.issn00220248
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70919
dc.description.abstractMetal organic chemical vapor deposition of InAs quantum dots (QDs) and GaAs/AlAs planar microcavities with InAs QDs as active layer using tertiarybutylarsine (TBAs) as arsenic precursor is reported. The effects of crucial growth parameters on growth of the InAs QDs are studied. The spontaneous emission (SE) of InAs QDs in open space and in planar microcavties are investigated using Photoluminescence (PL) and time resolved PL spectra. The behaviors of PL and time resolved PL of InAs QDs in open space can be explained in terms of thermal redistribution of carriers and carrier transfer between quantum dots. The SE rate of InAs QDs can be enhanced in the presence of a microcavity. © 2004 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jcrysgro.2004.04.066
dc.sourceScopus
dc.subjectA1. Photoluminescence
dc.subjectA1. Time-resolved photoluminescence
dc.subjectA3. Metalorganic chemical vapor deposition
dc.subjectA3. Microcavity
dc.subjectA3. Quantum dots
dc.subjectB1. TBA
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jcrysgro.2004.04.066
dc.description.sourcetitleJournal of Crystal Growth
dc.description.volume268
dc.description.issue3-4 SPEC. ISS.
dc.description.page420-425
dc.description.codenJCRGA
dc.identifier.isiut000223087000017
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