Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2004.04.066
Title: Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity
Authors: Zhang, X.H.
Dong, J.R.
Chua, S.J. 
Zhang, J.
Yong, A.
Keywords: A1. Photoluminescence
A1. Time-resolved photoluminescence
A3. Metalorganic chemical vapor deposition
A3. Microcavity
A3. Quantum dots
B1. TBA
Issue Date: 1-Aug-2004
Citation: Zhang, X.H., Dong, J.R., Chua, S.J., Zhang, J., Yong, A. (2004-08-01). Metalorganic chemical vapor deposition and spontaneous emission of self-assembled InAs quantum dots in open space and in a planar microcavity. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 420-425. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.066
Abstract: Metal organic chemical vapor deposition of InAs quantum dots (QDs) and GaAs/AlAs planar microcavities with InAs QDs as active layer using tertiarybutylarsine (TBAs) as arsenic precursor is reported. The effects of crucial growth parameters on growth of the InAs QDs are studied. The spontaneous emission (SE) of InAs QDs in open space and in planar microcavties are investigated using Photoluminescence (PL) and time resolved PL spectra. The behaviors of PL and time resolved PL of InAs QDs in open space can be explained in terms of thermal redistribution of carriers and carrier transfer between quantum dots. The SE rate of InAs QDs can be enhanced in the presence of a microcavity. © 2004 Elsevier B.V. All rights reserved.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/70919
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2004.04.066
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