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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1557372
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dc.titleLow switching current flux-closed magnetoresistive random access memory
dc.contributor.authorZheng, Y.K.
dc.contributor.authorWu, Y.H.
dc.contributor.authorLi, K.B.
dc.contributor.authorQiu, J.J.
dc.contributor.authorShen, Y.T.
dc.contributor.authorAn, L.H.
dc.contributor.authorGuo, Z.B.
dc.contributor.authorHan, G.C.
dc.contributor.authorLuo, P.
dc.contributor.authorYou, D.
dc.contributor.authorLiu, Z.Y.
dc.date.accessioned2014-06-19T03:16:52Z
dc.date.available2014-06-19T03:16:52Z
dc.date.issued2003-05-15
dc.identifier.citationZheng, Y.K., Wu, Y.H., Li, K.B., Qiu, J.J., Shen, Y.T., An, L.H., Guo, Z.B., Han, G.C., Luo, P., You, D., Liu, Z.Y. (2003-05-15). Low switching current flux-closed magnetoresistive random access memory. Journal of Applied Physics 93 (10 2) : 7307-7309. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1557372
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70840
dc.description.abstractLow switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1557372
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1557372
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume93
dc.description.issue10 2
dc.description.page7307-7309
dc.description.codenJAPIA
dc.identifier.isiut000182822300292
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