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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70818
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dc.titleLocalization of Cu/low-k interconnect reliability defects by pulsed laser induced technique
dc.contributor.authorTan, T.L.
dc.contributor.authorQuah, A.C.T.
dc.contributor.authorGan, C.L.
dc.contributor.authorPhang, J.C.H.
dc.contributor.authorChua, C.M.
dc.contributor.authorNg, C.M.
dc.contributor.authorDu, A.-Y.
dc.date.accessioned2014-06-19T03:16:37Z
dc.date.available2014-06-19T03:16:37Z
dc.date.issued2007
dc.identifier.citationTan, T.L.,Quah, A.C.T.,Gan, C.L.,Phang, J.C.H.,Chua, C.M.,Ng, C.M.,Du, A.-Y. (2007). Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 156-160. ScholarBank@NUS Repository.
dc.identifier.isbn0871708639
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70818
dc.description.abstractIn this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA. Copyright © 2007 ASM International® All rights reserved.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleConference Proceedings from the International Symposium for Testing and Failure Analysis
dc.description.page156-160
dc.identifier.isiutNOT_IN_WOS
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