Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70818
Title: Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique
Authors: Tan, T.L.
Quah, A.C.T.
Gan, C.L.
Phang, J.C.H. 
Chua, C.M.
Ng, C.M.
Du, A.-Y.
Issue Date: 2007
Source: Tan, T.L.,Quah, A.C.T.,Gan, C.L.,Phang, J.C.H.,Chua, C.M.,Ng, C.M.,Du, A.-Y. (2007). Localization of Cu/low-k interconnect reliability defects by pulsed laser induced technique. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 156-160. ScholarBank@NUS Repository.
Abstract: In this paper, the application of pulsed-TIVA for the localization of Cu/low-k: interconnect reliability defects in comb test structures is described. Two types of subtle dielectric defects which are otherwise not detectable with conventional TIVA can be detected with pulsed-TIVA. Copyright © 2007 ASM International® All rights reserved.
Source Title: Conference Proceedings from the International Symposium for Testing and Failure Analysis
URI: http://scholarbank.nus.edu.sg/handle/10635/70818
ISBN: 0871708639
Appears in Collections:Staff Publications

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