Please use this identifier to cite or link to this item: https://doi.org/10.1109/PVSC.2011.6186392
Title: Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses
Authors: Palina, N.
Mueller, T.
Mohanti, S.
Aberle, A.G. 
Issue Date: 2011
Source: Palina, N.,Mueller, T.,Mohanti, S.,Aberle, A.G. (2011). Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. Conference Record of the IEEE Photovoltaic Specialists Conference : 002193-002197. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2011.6186392
Abstract: In this paper, laser-assisted boron doping of planar and textured silicon wafers is investigated and optimized. Two laser types - a ns laser and a ps laser - are used, both operating at 532 nm. The following laser parameters are varied: pulse energy, repetition rate and laser scribing speed. The boron sources are commercially available spin-on dopant sources. The ps laser gives not satisfactory sheet resistance results and is thus not suitable for creating heavily doped p-type layers using the laser doping approach. In contrast, the ns laser is able to controllably realize heavily doped p-type profiles with desired sheet resistance value of below 100 Ohms/square. On planar surfaces, we realize profiles with a depth of about 0.5-2 μm. Interestingly, on textured samples, the heavily doped profile is found to be much thicker (about 3-5 μm). © 2011 IEEE.
Source Title: Conference Record of the IEEE Photovoltaic Specialists Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/70758
ISBN: 9781424499656
ISSN: 01608371
DOI: 10.1109/PVSC.2011.6186392
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