Please use this identifier to cite or link to this item:
|Title:||Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses|
|Source:||Palina, N.,Mueller, T.,Mohanti, S.,Aberle, A.G. (2011). Laser assisted boron doping of silicon wafer solar cells using nanosecond and picosecond laser pulses. Conference Record of the IEEE Photovoltaic Specialists Conference : 002193-002197. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2011.6186392|
|Abstract:||In this paper, laser-assisted boron doping of planar and textured silicon wafers is investigated and optimized. Two laser types - a ns laser and a ps laser - are used, both operating at 532 nm. The following laser parameters are varied: pulse energy, repetition rate and laser scribing speed. The boron sources are commercially available spin-on dopant sources. The ps laser gives not satisfactory sheet resistance results and is thus not suitable for creating heavily doped p-type layers using the laser doping approach. In contrast, the ns laser is able to controllably realize heavily doped p-type profiles with desired sheet resistance value of below 100 Ohms/square. On planar surfaces, we realize profiles with a depth of about 0.5-2 μm. Interestingly, on textured samples, the heavily doped profile is found to be much thicker (about 3-5 μm). © 2011 IEEE.|
|Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Dec 5, 2017
checked on Dec 9, 2017
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.