Large signal bias-dependent modeling of PHEMTs by pulsed measurements

Abstract

A bias-dependent large signal model and corresponding parameter extraction procedures are presented to characterize PHEMT transistors by pulsed measurements. Two nonlinear current sources and few additional parameters are used to model bias-dependence of the drain current. Results show that the method discussed in this letter can be applied to model the large signal behavior of PHEMTs from DC to RF at any bias points.