Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70753
Title: Large signal bias-dependent modeling of PHEMTs by pulsed measurements
Authors: Ooi, B.L. 
Lan, K. 
Leong, M.S. 
Kooi, K.S. 
Issue Date: 2001
Source: Ooi, B.L.,Lan, K.,Leong, M.S.,Kooi, K.S. (2001). Large signal bias-dependent modeling of PHEMTs by pulsed measurements. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers : 155-157. ScholarBank@NUS Repository.
Abstract: A bias-dependent large signal model and corresponding parameter extraction procedures are presented to characterize PHEMT transistors by pulsed measurements. Two nonlinear current sources and few additional parameters are used to model bias-dependence of the drain current. Results show that the method discussed in this letter can be applied to model the large signal behavior of PHEMTs from DC to RF at any bias points.
Source Title: IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
URI: http://scholarbank.nus.edu.sg/handle/10635/70753
Appears in Collections:Staff Publications

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