Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICSICT.2008.4734611
Title: Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics
Authors: Li, M.-F. 
Huang, D.
WJLiu
ZYLiu
Luo, Y.
CCLiao
LFZhang
ZHGan
Wong, W.
Issue Date: 2008
Source: Li, M.-F., Huang, D., WJLiu, ZYLiu, Luo, Y., CCLiao, LFZhang, ZHGan, Wong, W. (2008). Issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT : 604-607. ScholarBank@NUS Repository. https://doi.org/10.1109/ICSICT.2008.4734611
Abstract: Some issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics are summarized. The resolutions of these issues from our point of view are illustrated. © 2008 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/70704
ISBN: 9781424421855
DOI: 10.1109/ICSICT.2008.4734611
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