Please use this identifier to cite or link to this item: https://doi.org/10.1109/IMWS2.2012.6338238
Title: Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method
Authors: Zhong, Z. 
Guo, Y.-X. 
Zhou, J.
Chen, C.
Issue Date: 2012
Source: Zhong, Z.,Guo, Y.-X.,Zhou, J.,Chen, C. (2012). Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method. IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding : 163-166. ScholarBank@NUS Repository. https://doi.org/10.1109/IMWS2.2012.6338238
Abstract: Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs. © 2012 IEEE.
Source Title: IEEE MTT-S International Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications, IMWS 2012 - Proceeding
URI: http://scholarbank.nus.edu.sg/handle/10635/70681
ISBN: 9781467309028
DOI: 10.1109/IMWS2.2012.6338238
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