Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2890420
Title: Investigation of effect of germanium on the crystallization process of hafnium aluminum oxide matrix
Authors: Zheng, F.
Choi, W.K. 
Chew, H.G.
Chan, L.
Issue Date: 2008
Source: Zheng, F.,Choi, W.K.,Chew, H.G.,Chan, L. (2008). Investigation of effect of germanium on the crystallization process of hafnium aluminum oxide matrix. ECS Transactions 11 (17) : 11-17. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2890420
Abstract: Germanium (Ge) nanocrystals have been successfully synthesized in the hafnium aluminum oxide (HfAlO) matrix via co-sputtering and furnace annealing. The crystallization process of the HfAlO film has been studied using a combination of Raman spectroscopy, transmission electron microscopy, secondary ions mass spectrometry and X-Ray diffraction techniques. It was found that 800°C is the ideal annealing temperature for synthesis of Ge nanocrystals in HfAlO matrix. A higher the annealing temperature will result in significant Ge outdiffusion and thus no formation of the nanocrystals. In addition, for the sample with relatively high Ge content (∼23.3%) in the HfAlO matrix, a noteworthy Ge outdiffusion and the crystallization of the film were observed even upon the annealing at 800°C. The crystallographic phase of the film was found to favor the orthorhombic phase. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70677
ISBN: 9781605601908
ISSN: 19385862
DOI: 10.1149/1.2890420
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