Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70654
Title: Interplay of defects, microstructures, and surface stoichiometry during plasma processing of GaN
Authors: Ramam, A.
Tripathy, S. 
Chua, S.J. 
Issue Date: 2002
Source: Ramam, A.,Tripathy, S.,Chua, S.J. (2002). Interplay of defects, microstructures, and surface stoichiometry during plasma processing of GaN. Materials Research Society Symposium - Proceedings 722 : 187-192. ScholarBank@NUS Repository.
Abstract: We have investigated optical properties of dry eleched GaN using photoluminescence (PL) and micro-Raman scattering. The stoichiometry of the dry etched surface has been analyzed by x-ray photoelectron spectroscopy (XPS). Atomic force microscopy (AFM) technique has been employed to investigate the microstructures resulting from dry processing. The damage introduced by inductively coupled plasma etching has been assessed and improvement of the luminescence properties is observed during post etch annealing. The observed changes in the Raman spectra of plasma etched Si- and Mg- doped GaN can be associated with electronic and vibronic scattering mechanisms of defects.
Source Title: Materials Research Society Symposium - Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/70654
ISSN: 02729172
Appears in Collections:Staff Publications

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