Please use this identifier to cite or link to this item: https://doi.org/10.1109/PEDS.2013.6527074
Title: Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTs
Authors: Li, Y.
Liang, Y.C. 
Samudra, G.S. 
Huang, H.
Yeo, Y.-C. 
Issue Date: 2013
Source: Li, Y.,Liang, Y.C.,Samudra, G.S.,Huang, H.,Yeo, Y.-C. (2013). Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTs. Proceedings of the International Conference on Power Electronics and Drive Systems : 521-524. ScholarBank@NUS Repository. https://doi.org/10.1109/PEDS.2013.6527074
Abstract: The slow recovery in pulsed drain current in AlGaN/GaN power HEMTs caused by high voltage stress during off-state becomes an important research topic in power electronic switching applications. To further investigate this phenomenon, the influence of gate drive towards the drain current recovery is investigated in this paper. The gate drive current can influence the de-trapping process along the AlGaN device surface, which then in turn affecting the 2DEG conductivity for the on-state current recovery. The analysis is made through the physical model and 2D T-CAD Sentaurus simulations, and verified by the experimental measurement. The proposed work is able to assist engineers in gate drive design for AlGaN/GaN power HEMT devices for fast pulsed current recovery in high-frequency switching. © 2013 IEEE.
Source Title: Proceedings of the International Conference on Power Electronics and Drive Systems
URI: http://scholarbank.nus.edu.sg/handle/10635/70594
ISBN: 9781467317900
DOI: 10.1109/PEDS.2013.6527074
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