Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.711493
Title: Influence of wafer warpage on photoresist film thickness and extinction coefficient measurements
Authors: Wu, X.
Tay, A. 
Keywords: Lithography
Photoresist processing
Wafer warpage
Issue Date: 2007
Source: Wu, X., Tay, A. (2007). Influence of wafer warpage on photoresist film thickness and extinction coefficient measurements. Proceedings of SPIE - The International Society for Optical Engineering 6518 (PART 3) : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.711493
Abstract: Photoresist film thickness and extinction coefficient are two important properties which has an impact on critical dimension (CD). Current approaches for estimating these resist film properties are based on the assumption of a flat wafer. However, wafer warpage is common in microelectronics processing. In this paper, the effect of wafer warpage on the accuracy of resist properties estimation is investigated and an in-situ calibration method is proposed. Based on the proposed approach, we demonstrate how wafer warpage can be detected in real-time using conventional reflectometers during the thermal processing steps in lithography.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/70592
ISBN: 0819466379
ISSN: 0277786X
DOI: 10.1117/12.711493
Appears in Collections:Staff Publications

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