Incorporation of self assembled In-rich InGaN nanostructure to achieve redshift in InGaN/GaN heterostructures

Abstract

The epitaxy growth of InGaN/GaN MQWs posed a great challenge, especially when high In content have to be incorporated for long wavelength applications such as the cyan and green LEDs. To realize devices with superior characteristic, In-rich InGaN nanostrucutres (QDs) have been fabricated using InGaN wetting layer and trimethylIndium treatment in InGaN well. In InGaN QWs, nanometer scale fluctuation of the indium nanostructures can lead to "QD-like" states which act as nucleation site to enhance In incorporation. This leads to red-shift in PL dominant peak emission and a broadening of PL spectrum at its higher wavelength. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.