Please use this identifier to cite or link to this item:
https://doi.org/10.1149/05009.1025ecst
DC Field | Value | |
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dc.title | In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects | |
dc.contributor.author | Han, G. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Guo, P. | |
dc.contributor.author | Wang, W. | |
dc.contributor.author | Yang, Y. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-06-19T03:13:40Z | |
dc.date.available | 2014-06-19T03:13:40Z | |
dc.date.issued | 2012 | |
dc.identifier.citation | Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C. (2012). In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects. ECS Transactions 50 (9) : 1025-1030. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.1025ecst | |
dc.identifier.isbn | 9781607683575 | |
dc.identifier.issn | 19385862 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/70572 | |
dc.description.abstract | We investigate the growth of in situ boron (B) doped Ge (denoted as Ge:B) on Si(100), (110) and (111) substrates at low temperature using an ultra-high vacuum chemical vapor deposition (UHVCVD) tool. The growth rate of Ge:B on Si(100) is higher than that on Si(110) at 320 °C. The growth of Ge:B on Si(111) achieves 3D quantum dots at 320 °C and continuous film at 300 °C. The growth rate of Ge:B on Si(111) at 300 °C is much lower than other two orientations at 320 °C. For all the orientations, Ge:B shows a higher growth rate than intrinsic Ge. © The Electrochemical Society. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/05009.1025ecst | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1149/05009.1025ecst | |
dc.description.sourcetitle | ECS Transactions | |
dc.description.volume | 50 | |
dc.description.issue | 9 | |
dc.description.page | 1025-1030 | |
dc.identifier.isiut | 000338015300123 | |
Appears in Collections: | Staff Publications |
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