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|Title:||In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects|
|Authors:||Han, G. |
|Citation:||Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C. (2012). In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects. ECS Transactions 50 (9) : 1025-1030. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.1025ecst|
|Abstract:||We investigate the growth of in situ boron (B) doped Ge (denoted as Ge:B) on Si(100), (110) and (111) substrates at low temperature using an ultra-high vacuum chemical vapor deposition (UHVCVD) tool. The growth rate of Ge:B on Si(100) is higher than that on Si(110) at 320 °C. The growth of Ge:B on Si(111) achieves 3D quantum dots at 320 °C and continuous film at 300 °C. The growth rate of Ge:B on Si(111) at 300 °C is much lower than other two orientations at 320 °C. For all the orientations, Ge:B shows a higher growth rate than intrinsic Ge. © The Electrochemical Society.|
|Source Title:||ECS Transactions|
|Appears in Collections:||Staff Publications|
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