Please use this identifier to cite or link to this item: https://doi.org/10.1149/05009.1025ecst
Title: In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects
Authors: Han, G. 
Zhou, Q. 
Guo, P.
Wang, W.
Yang, Y.
Yeo, Y.-C. 
Issue Date: 2012
Source: Han, G., Zhou, Q., Guo, P., Wang, W., Yang, Y., Yeo, Y.-C. (2012). In situ boron (B) doped germanium (Ge:B) grown on (100), (110), and (111) silicon: Crystal orientation and b incorporation effects. ECS Transactions 50 (9) : 1025-1030. ScholarBank@NUS Repository. https://doi.org/10.1149/05009.1025ecst
Abstract: We investigate the growth of in situ boron (B) doped Ge (denoted as Ge:B) on Si(100), (110) and (111) substrates at low temperature using an ultra-high vacuum chemical vapor deposition (UHVCVD) tool. The growth rate of Ge:B on Si(100) is higher than that on Si(110) at 320 °C. The growth of Ge:B on Si(111) achieves 3D quantum dots at 320 °C and continuous film at 300 °C. The growth rate of Ge:B on Si(111) at 300 °C is much lower than other two orientations at 320 °C. For all the orientations, Ge:B shows a higher growth rate than intrinsic Ge. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70572
ISBN: 9781607683575
ISSN: 19385862
DOI: 10.1149/05009.1025ecst
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