Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70537
Title: Impact of metal gate work function on nano CMOS device performance
Authors: Hou, Y.T. 
Low, T.
Xu, B.
Li, M.-F. 
Samudra, G. 
Kwong, D.L.
Issue Date: 2004
Source: Hou, Y.T.,Low, T.,Xu, B.,Li, M.-F.,Samudra, G.,Kwong, D.L. (2004). Impact of metal gate work function on nano CMOS device performance. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 1 : 57-60. ScholarBank@NUS Repository.
Abstract: We studied two effects in the metal gate work function engineering in nano CMOSFETs: (1) Gate work function shifts induced by carrier quantization in Si and Ge ultra-thin body FETs with sub-10 nm body thickness and different surface orientations. Guidelines for metal gate work function engineering are provided and technical challenges identified; (2) We presented a systematic study on gate tunneling characteristics of metal gate CMOSFETs. A reduction of gate to source/drain extension tunneling is found when using near mid-gap metal gate in SOI CMOS, especially when using high-K dielectric. Benefits of this reduction to transistor off-state leakage and to future CMOS scaling were analyzed. © 2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/70537
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