Please use this identifier to cite or link to this item: https://doi.org/10.1109/IEDM.2007.4418900
Title: Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing
Authors: Toh, E.-H.
Wang, G.H.
Zhu, M. 
Shen, C.
Chan, L.
Lo, G.-Q.
Tung, C.-H.
Sylvester, D.
Heng, C.-H. 
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 2007
Source: Toh, E.-H., Wang, G.H., Zhu, M., Shen, C., Chan, L., Lo, G.-Q., Tung, C.-H., Sylvester, D., Heng, C.-H., Samudra, G., Yeo, Y.-C. (2007). Impact ionization nanowire transistor with multiple-gates, silicon-germanium impact ionization region, and sub-5 mV/decade subtheshold swing. Technical Digest - International Electron Devices Meeting, IEDM : 195-198. ScholarBank@NUS Repository. https://doi.org/10.1109/IEDM.2007.4418900
Abstract: We report the first demonstration of an Impact Ionization Nanowire Multiple-gate Field-Effect Transistor (I-MuGFET or I-FinFET). Excellent subthreshold swing of sub-5 mV/decade at room temperature was achieved. The multiple-gate structure enhances the impact ionization rate in the fin or nanowire channel, reduces the breakdown voltage and improves device performance. A Silicon-Germanium (SiGe) Impact Ionization Region (I-Region) is integrated on a Si or SiGe nanowire to enhance performance and reduce the breakdown voltage. A record low breakdown voltage of -4.75 V is achieved for SiGe nanowire device. Complementary pair of I-FinFETs were realized. The lower electron and hole impact-ionization threshold energy of SiGe greatly enhances the drive current of n- and p-channel devices by 3 and 2.4 folds, respectively. © 2007 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/70531
ISSN: 01631918
DOI: 10.1109/IEDM.2007.4418900
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