Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.2003397
Title: Hybrid silicon organic high speed electro-optic phase shifter
Authors: Lim, S.T.
Xin, M.
Png, C.E.
Dixit, V.
Danner, A.J. 
Keywords: Electro-optic phase shifter
Organic polymer
Silicon
Issue Date: 2013
Source: Lim, S.T., Xin, M., Png, C.E., Dixit, V., Danner, A.J. (2013). Hybrid silicon organic high speed electro-optic phase shifter. Proceedings of SPIE - The International Society for Optical Engineering 8619 : -. ScholarBank@NUS Repository. https://doi.org/10.1117/12.2003397
Abstract: We study a hybrid silicon organic high speed electro-optic phase shifter based on polymer infiltrated P-S-N ("S" refers to the slot) diode capacitor structure. This optical phase shift is realized based on index perturbation both inside the slot via Pockels nonlinearity and within the silicon ridges via the free carrier effect (carrier depletion). The combination of the polymer diode capacitor configuration with the low aspect ratio slot waveguide system leads to a promising method of constructing sub-THz speed optical modulators without sacrificing either modulation efficiency or energy consumption. By optimizing the waveguide geometry in terms of balancing effective index shift and device speed, at least 269 GHz bandwidth can be achieved with a high modulation efficiency of 5.5 V-cm when the diode capacitor is reverse biased by an external radio frequency (RF) voltage signal between the electrodes (optical propagation loss is acceptably low at 4.29 dB). © 2013 Copyright SPIE.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/70505
ISBN: 9780819493880
ISSN: 0277786X
DOI: 10.1117/12.2003397
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