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|Title:||High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD|
|Authors:||Dutta Gupta, S.|
|Citation:||Dutta Gupta, S.,Hoex, B.,Lin, F.,Mueller, T.,Aberle, A.G. (2011). High-quality surface passivation of low-resistivity p-type C-Si by hydrogenated amorphous silicon nitride deposited by industrial-scale microwave PECVD. Conference Record of the IEEE Photovoltaic Specialists Conference : 001421-001423. ScholarBank@NUS Repository. https://doi.org/10.1109/PVSC.2011.6186223|
|Abstract:||High-quality surface passivation is realized with plasma silicon nitride films deposited dynamically in an industrial microwave-powered plasma-enhanced chemical vapor deposition reactor. For low-resistivity p-Si wafers symmetrically passivated by as-deposited nearly-stoichiometric (n = 2.05) nitride films, we reach effective carrier lifetimes of up to 800 μs, increasing to up to 1800 μs for samples passivated by silicon-rich nitride films (n = 2.5). This corresponds to excellent surface recombination velocities of less than 14 and 4 cm/s, respectively, assuming a bulk carrier lifetime of 3.38 ms. Such levels of silicon surface passivation with plasma silicon nitride have previously only been possible with static laboratory systems. © 2011 IEEE.|
|Source Title:||Conference Record of the IEEE Photovoltaic Specialists Conference|
|Appears in Collections:||Staff Publications|
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