Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2778370
Title: High-k gate stack formation on strained SiGe substrate for MOSFET applications
Authors: Zhu, C. 
Li, M.F. 
Huang, J.
Fu, J.
Issue Date: 2007
Source: Zhu, C.,Li, M.F.,Huang, J.,Fu, J. (2007). High-k gate stack formation on strained SiGe substrate for MOSFET applications. ECS Transactions 11 (6) : 115-123. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2778370
Abstract: In this paper, we examine the high-k gate stack formation on strained SiGe for p-channel MOSFET applications by comparing two different surface passivations. Experimental results show that although both surface nitridation and silicon passivation provide good MOS capacitors on SiGe substrates, the devices with ultra-thin Si passivation layer provides higher hole mobility than those with surface nitridation. It is believed that nitrogen incorporation during surface nitridation may degrade hole mobility. © The Electrochemical Society.
Source Title: ECS Transactions
URI: http://scholarbank.nus.edu.sg/handle/10635/70479
ISBN: 9781566775724
ISSN: 19385862
DOI: 10.1149/1.2778370
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