Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jcrysgro.2005.12.033
Title: Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealing
Authors: Choi, W.K. 
Chew, H.G.
Ho, V.
Ng, V. 
Chim, W.K. 
Ho, Y.W.
Ng, S.P.
Keywords: A1. Ge nanocrystals
A2. Rapid thermal annealing
Issue Date: 2-Feb-2006
Source: Choi, W.K., Chew, H.G., Ho, V., Ng, V., Chim, W.K., Ho, Y.W., Ng, S.P. (2006-02-02). Formation of germanium nanocrystals in thick silicon oxide matrix on silicon substrate under rapid thermal annealing. Journal of Crystal Growth 288 (1) : 79-83. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.033
Abstract: The formation of germanium (Ge) nanocrystals under rapid thermal annealing was attributed mainly to the reduction of Ge suboxides by silicon (Si) diffused from the Si substrate. It was observed that the nanocrystals could be uniformly distributed in the bulk of the oxide when annealed at 800 °C, or could result in regions with different nanocrystal densities and size distributions in the bulk of the oxide separated by a region void of nanocrystals when annealed at 900 °C. For annealing at 1000 °C, nanocrystals were only observed at the silicon-silicon dioxide interface and these have significant size variation, with the rest of the oxide being void of nanocrystals. The nanocrystals formed at 900 and 1000 °C were generally found to be defective.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/70365
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2005.12.033
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