Please use this identifier to cite or link to this item: https://doi.org/10.1117/12.485501
Title: Extending a GTD-based image formation technique to EUV lithography
Authors: Khoh, A.
Flagello, D.
Milster, T.
Choi, B.-I.
Samudra, G.S. 
Wu, Y. 
Keywords: DER
EUV lithography
GTD
Image formation technique
OPC
Issue Date: 2003
Source: Khoh, A.,Flagello, D.,Milster, T.,Choi, B.-I.,Samudra, G.S.,Wu, Y. (2003). Extending a GTD-based image formation technique to EUV lithography. Proceedings of SPIE - The International Society for Optical Engineering 5037 II : 682-689. ScholarBank@NUS Repository. https://doi.org/10.1117/12.485501
Abstract: An image formation technique based on the Geometrical Theory of Diffraction was presented last conference. The technique is a scalar technique and is applicable to infinitely thin and perfectly conducting mask. We explore in this paper the extension of the technique to 1D Extreme Ultra-Violet(EUV) Lithography mask, taking into consideration both the material property and the topography of the mask. Vectorial nature of light is incorporated in the treatment. Results obtained are promising and encouraging. Computation time is relatively much shorter and the technique could simulate irradiance profile for any illumination angle. The technique is simple and elegant and lends understanding to image formation. We conclude that the asymmetry-through-focus characteristic usually found in EUV and Phase Mask imaging is an imaging phenomenon. We also conclude that corrections for proximity effect and pattern infidelity will be needed when EUV Lithography is introduced at the 32 nm node, assuming a system NA of 0.25. Lastly, for a partially coherent illumination, it appears necessary to compute the irradiance corresponding to each illumination point individually.
Source Title: Proceedings of SPIE - The International Society for Optical Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/70265
ISSN: 0277786X
DOI: 10.1117/12.485501
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