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|Title:||Experimental characterization of the reliability of 3-terminal dual-damascene copper interconnect trees|
|Source:||Gan, C.L.,Thompson, C.V.,Pey, K.L.,Choi, W.K.,Wei, F.,Yu, B.,Hau-Riege, S.P. (2002). Experimental characterization of the reliability of 3-terminal dual-damascene copper interconnect trees. Materials Research Society Symposium - Proceedings 716 : 431-438. ScholarBank@NUS Repository.|
|Abstract:||Electromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigration-resistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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