Please use this identifier to cite or link to this item: https://doi.org/10.1109/ESSDER.2006.307694
Title: Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
Authors: Lousberg, G.P.
Yu, H.Y.
Froment, B.
Li, M.F. 
Augendre, E.
De Keersgieter, A.
Demeurisse, C.
Brus, S.
Degroote, B.
Hoffmann, T.
Lauwers, A.
DePotter, M.
Kubicek, S.
Anil, K.
Absil, P.
Jurczak, M.
Biesemans, S.
Issue Date: 2007
Source: Lousberg, G.P.,Yu, H.Y.,Froment, B.,Li, M.F.,Augendre, E.,De Keersgieter, A.,Demeurisse, C.,Brus, S.,Degroote, B.,Hoffmann, T.,Lauwers, A.,DePotter, M.,Kubicek, S.,Anil, K.,Absil, P.,Jurczak, M.,Biesemans, S. (2007). Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs. ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference : 286-289. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDER.2006.307694
Abstract: In this paper, we study experimentally and numerically the Schottky barrier height (SBH) lowering of Pt silicide/n-Si diodes and its implications to Schottky-barrier (SB) source/drain p-FETs. We demonstrate that hole SBH can be lowered through an image-force mechanism by increasing the n-Si substrate doping, which leads to a substantial gain of the drive current in the long-channel bulk p-SBFETs. Numerical simulations show that the channel doping concentration is also critical for short-channel n- & p- SOI SBFETs performance. © 2006 IEEE.
Source Title: ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
URI: http://scholarbank.nus.edu.sg/handle/10635/70239
ISBN: 1424403014
DOI: 10.1109/ESSDER.2006.307694
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